| PART |
Description |
Maker |
| 2SD965 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
| 74VCXH162245 6461 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)
From old datasheet system
|
STMicro
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| CD4049UBC CD4050B CD4050BC CD4049UBC02 CD4050BCN C |
LOGIC GATE|HEX INVERTER|CMOS|SOP|16PIN|PLASTIC
HEX INVERTING BUFFER HEX NON-INVERTING BUFFER
Hex Inverting Buffer •
Hex Inverting Buffer ?Hex Non-Inverting Buffer
|
FAIRCHILD[Fairchild Semiconductor]
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51 |
1M x 16Bit EDO DRAM
|
Hynix Semiconductor
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
| AKD5355 AK5355VN AK535505 AK5355VT |
Low Power 16bit ΔΣ ADC
|
Asahi Kasei Microsystems
Asahi Kasei Microsystem...
|
